| PART |
Description |
Maker |
| AT49LV2048A AT49BV2048A AT49LV2048A-70TC AT49LV204 |
2M bit, 3.0-Volt Read and 3.0-Volt Write, Byte-Write Flash, Bottom Boot
2M bit, 2.7-Volt Read and 2.7-Volt Write, Byte-Write Flash, Bottom Boot
2-megabit (256K x 8/128K x 16) Single 2.7-volt Battery-Voltage Flash Memory
|
Atmel
|
| IDT71V2577YS75BQI IDT71V2577YS75BGI IDT71V2579S85B |
128K x 36,256K x 18 3.3V Synchronous SRAMs 2.5V I/O,Flow-Through Outputs Burst Counter,Single Cycle Deselect 128K X 36 CACHE SRAM, 8 ns, PQFP100
128K x 36,256K x 18 3.3V Synchronous SRAMs 2.5V I/O,Flow-Through Outputs Burst Counter,Single Cycle Deselect 128K的x 36256亩18 3.3同步SRAM.5VI / O的流量通过输出脉冲计数器，单周期取
128K x 36,256K x 18 3.3V Synchronous SRAMs 2.5V I/O,Flow-Through Outputs Burst Counter,Single Cycle Deselect 128K X 36 CACHE SRAM, 8.5 ns, PQFP100
128K x 36,256K x 18 3.3V Synchronous SRAMs 2.5V I/O,Flow-Through Outputs Burst Counter,Single Cycle Deselect 128K X 36 CACHE SRAM, 7.5 ns, PQFP100
128K x 36,256K x 18 3.3V Synchronous SRAMs 2.5V I/O,Flow-Through Outputs Burst Counter,Single Cycle Deselect 128K X 36 CACHE SRAM, 7.5 ns, PBGA119
128K x 36,256K x 18 3.3V Synchronous SRAMs 2.5V I/O,Flow-Through Outputs Burst Counter,Single Cycle Deselect 256K X 18 CACHE SRAM, 7.5 ns, PBGA119
128K x 36,256K x 18 3.3V Synchronous SRAMs 2.5V I/O,Flow-Through Outputs Burst Counter,Single Cycle Deselect 256K X 18 CACHE SRAM, 8 ns, PBGA165
|
Integrated Device Technology, Inc.
INTEGRATED DEVICE TECHNOLOGY INC
|
| LMG5278XUFC-00T |
486-586LCD
|
Hitachi Electronics
|
| GENE-8310W1 |
Onboard Intel? ULV Celeron? M Processor at 600 MHz 512K Cache & 1 GHz 0 Cache
|
AAEON Technology
|
| CY7C1367C-166BGC CY7C1366C-200BZI CY7C1366C-200BZC |
Low Cost, 300 MHz Rail-to-Rail Amplifier (Single); Package: SOT-23; No of Pins: 5; Temperature Range: Industrial 512K X 18 CACHE SRAM, 3.5 ns, PBGA119
Low Cost, Single, 300 MHz Voltage Feedback Amplifier; Package: SOT-23; No of Pins: 5; Temperature Range: Industrial 256K X 36 CACHE SRAM, 3 ns, PBGA165
9-Mbit (256K x 36/512K x 18) Pipelined DCD Sync SRAM 512K X 18 CACHE SRAM, 2.8 ns, PBGA165
|
Cypress Semiconductor, Corp.
CYPRESS SEMICONDUCTOR CORP
|
| MWDM1L-GP-0E MWDM2L-GP-0E MWDM4L-GP-0E MWDM5L-GP-0 |
Micro-D Metal Shell MWDM Back-To-Back Unshielded Cable Assemblies
|
Glenair, Inc.
|
| 891-00525CST-0 891-00525CSA1-0 891-00525CSA1-2 891 |
Nanominiature Connectors Double Row Back-To-Back
|
Glenair, Inc.
|
| MSS50 MSS40 |
(MSS40 / MSS60) BACK TO BACK SCR MODULE
|
Comset Semiconductors
|
| IDT6178S IDT6178S10D IDT6178S10DB IDT6178S10P IDT6 |
CMOS StaticRAM 16K (4K x 4-BIT) CACHE-TAG RAM
Low-Power JFET-Input Operational Amplifier 8-PDIP 0 to 70 4K X 4 CACHE TAG SRAM, 15 ns, CDIP22
Dual Low-Power JFET-Input General-Purpose Operational Amplifier 8-SOIC 0 to 70 4K X 4 CACHE TAG SRAM, 15 ns, PDSO24
CMOS StaticRAM 16K (4K x 4-BIT) CACHE-TAG RAM 4K X 4 CACHE TAG SRAM, 25 ns, PDSO24
CMOS StaticRAM 16K (4K x 4-BIT) CACHE-TAG RAM 4K X 4 CACHE TAG SRAM, 25 ns, CDIP22
IC 8-BIT BUS SW 2-PORT 20-QSOP
|
Integrated Device Techn...
Integrated Device Technology, Inc.
IDT[Integrated Device Technology]
|
| AS5SP128K36DQ-35XT AS5SP128K36DQ-35ET AS5SP128K36D |
128K X 36 CACHE SRAM, 3.5 ns, PQFP100 14 X 20 MM, MS-026-D/BHA, TQFP-100
128K X 36 CACHE SRAM, 4 ns, PQFP100 14 X 20 MM, MS-026-D/BHA, TQFP-100
Plastic Encapsulated Microcircuit 4.5Mb, 128K x 36, Synchronous SRAM Pipeline Burst, Single Cycle Deselect
|
Austin Semiconductor, Inc
|
| HM64YLB36512BP-33 HM64YLB36512BP-28 HM64YLB36512-1 |
512K X 36 LATE-WRITE SRAM, 1.6 ns, PBGA119
16M Synchronous Late Write Fast Static RAM (512-kword × 36-bit)
|
Renesas Electronics Corporation
|
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